Technion researchers have presented an innovative method for the formation of nanowires. In it, the nanowires form within line defects that exist in metals. Such defects are known as dislocations.

It has been found that the mechanical properties of small volumes significantly differ from those of bulk volumes for a wide variety of materials. Several methods are available for increasing the ...

Researchers and industries have been using transmission electron microscopy (TEM) to study semiconductors' stacking and dislocation faults. This article considers the analysis of crystal structures.

The material gallium nitride (GaN) is extensively used in optoelectronic devices such as Light Emitting Diodes (LEDs). LED structures are typically grown by epitaxy on sapphire substrates, but due to ...