Researchers from the Institute of Metal Research (IMR) of the Chinese Academy of Sciences have developed a new ferroelectric ...

Emerging opportunities include the demand for ultra-low power electronics, IoT integration, and smart city tech. Innovations in thin-film materials and memory-display systems highlight potential.

A research team led by Professor Youngwook Kim from the Department of Physics and Chemistry, DGIST, in collaboration with the research team of Professor Gil Young Cho at KAIST, have discovered a new ...

Adding zinc ions to lithium niobate crystals cuts the energy needed for polarization switching by 69%, enabling visible-light programming of memristors for brain-inspired computing.

Piezoresponse force microscopy (PFM) is an effective method for examining ferroelectric materials due to its nanometer-level resolution and high sensitivity, inherited from atomic force microscopy ...

BUFFALO, N.Y. — A University at Buffalo-led research team has reported a new 3D-printed molecular ferroelectric metamaterial. The advancement, published Monday in the Proceedings of the National ...

Researchers have pioneered a breakthrough in ferroelectric material development. They've engineered a novel displacement-type ferroelectric material boasting remarkable dielectric properties. Their ...

Researchers have introduced a new FE-FET design that demonstrates record-breaking performances in both computing and memory. The Big Data revolution has strained the capabilities of state-of-the-art ...

Researchers in Japan have developed ultrathin ferroelectric capacitors that maintain strong polarization at a stack thickness of just 30 nm, including top and bottom electrodes. Using scandium-doped ...