Toshiba is test-sampling shipments of the TW007D120E, 1,200V trench-gate SiC mosfet primarily intended for power supply ...
High-reliability rad hard MOSFETs undergo extensive screening and quality conformance testing to ensure that devices perform to specification in the harshest environments. For Defense Logistics Agency ...
Toshiba Electronic Devices & Storage Corporation ("Toshiba") today started shipping test samples of “TW007D120E,” a 1200V ...
Cree Inc., a maker of silicon carbide (SiC) power devices, has introduced a new Cree MOSFET design kit that includes all of the components needed to evaluate Cree MOSFET and Schottky diode performance ...
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